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SE6020DB

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 30mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 45W Type: N channel N channel 60V 20A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size467KB,7 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE6020DB Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 30mΩ @ 20A, 10V Maximum power dissipation (Ta =25°C): 45W Type: N channel N channel 60V 20A

SE6020DB Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C20A
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance30mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)45W
typeN channel

SE6020DB Preview

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SE6020DB
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low
On-Resistance Fully Characterized Avalanche
Voltage and Current Improved Shoot-Through
FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= 60V
R
DS(ON)
= 24mΩ @ V
GS
=10V
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
60
±20
20
60
45
-55 to 175
Units
V
V
A
W
Operating Junction Temperature Range
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance Junction to Case
Typ
-
Max
3.3
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
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