7N60GS datasheet, PDF - EEWORLD Datasheet

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7N60GS: DescriptionDrain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 7A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 580mΩ @ 3.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 63W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size541KB，7 Pages; ManufacturerChongqing Pingwei Enterprise co.,Ltd.; Websitehttp://www.perfectway.cn; Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).

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7N60GS Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 7A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 580mΩ @ 3.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 63W(Tc) Type: N-channel

7N60GS Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	600V
Continuous drain current (Id) at 25°C	7A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	580mΩ @ 3.5A, 10V
Maximum power dissipation (Ta=25°C)	63W(Tc)
type	N channel

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