B5819WS datasheet, PDF - EEWORLD Datasheet

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B5819WS: DescriptionDC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 600mV @ 1A 40V, 1A, VF=0.6V@1A; CategoryDiscrete semiconductor Schottky diode; File Size406KB，4 Pages; ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.; Websitehttp://www.microdiode.com/; Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.

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B5819WS Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 600mV @ 1A 40V, 1A, VF=0.6V@1A

B5819WS Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	40V
Average rectified current (Io)	1A
Forward voltage drop (Vf)	600mV @ 1A

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B5817WS-B5819WS

Schottky Barrier Diode

FEATURES

Extremely low V

Low stored change,majority carrier

conduction

Low power loss/high efficient

Lead-free

APPLICATIONS

For Use In Low Voltage, High Frequency Inverters

Free Wheeling, And Polarity Protection Applications

SOD-323

ORDERING INFORMATION

Type No.

B5817WS

B5818WS

B5819WS

Marking

Package Code

SOD-323

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Parameter

Non-Repetitive Peak reverse voltage

Peak repetitive Peak reverse voltage

Working Peak Reverse voltage

DC Reverse Voltage

RMS Reverse Voltage

Average Rectified output Current

Peak forward surge current@=8.3ms

Power Dissipation

Thermal Resistance Junction to Ambient

Storage temperature

symbol

RRM

RWM

R(RMS)

FSM

θJA

STG

B5817WS

B5818WS

B5819WS

Unit

235

426

-55 to +150

℃/W

℃

２０１４－０３　０１版

½½½½：／／½½½．½½½½½½½½½½．½½½

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