KNL42150A datasheet, PDF - EEWORLD Datasheet

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KNL42150A: DescriptionDrain-source voltage (Vdss): 1500V Continuous drain current (Id) (at 25°C): 2.8A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 9Ω @ 1.3A, 0V Maximum power Dissipation (Ta=25°C): 63W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size107KB，5 Pages; ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.; Websitehttp://www.kiaic.com/page/qiyejianjie.htm; Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.

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KNL42150A Overview

Drain-source voltage (Vdss): 1500V Continuous drain current (Id) (at 25°C): 2.8A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 9Ω @ 1.3A, 0V Maximum power Dissipation (Ta=25°C): 63W(Tc) Type: N-channel

KNL42150A Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	1500V
Continuous drain current (Id) at 25°C	2.8A(Tc)
Gate-source threshold voltage	5V @ 250uA
Drain-source on-resistance	9Ω @ 1.3A,0V
Maximum power dissipation (Ta=25°C)	63W(Tc)
type	N channel

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