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FM540S-AL

Description
DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 5A Forward voltage drop (Vf): 550mV @ 5A
CategoryDiscrete semiconductor    Schottky diode   
File Size53KB,2 Pages
ManufacturerFORMOSAMS
Websitehttp://www.formosagr.com/
FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.
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FM540S-AL Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 5A Forward voltage drop (Vf): 550mV @ 5A

FM540S-AL Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)40V
Average rectified current (Io)5A
Forward voltage drop (Vf)550mV @ 5A

FM540S-AL Preview

Download Datasheet
Chip Schottky Barrier Rectifier
FM540S-AL
5.0A Surface Mount Schottky Barrier
Rectifiers 40V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current capability, low forward voltage drop.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen free parts
Formosa MS
Package outline
SMA-L
0.209(5.3)
0.185(4.7)
0.012(0.3) Typ.
0.114(2.9)
0.091(2.3)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, DO-214AC / SMA-L
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.05 gram
0.032(0.8) Typ.
0.080(2.0)
0.063(1.6)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings
(AT
PARAMETER
Forward rectified current
Forward surge current
T
A
=25
o
C unless otherwise noted)
CONDITIONS
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 100 C
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
O
Symbol
I
O
I
FSM
I
R
R
èJA
C
J
T
STG
MIN.
TYP.
MAX.
5.0
80
0.5
20
80
UNIT
A
A
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
mA
O
C/W
pF
O
250
-55
+150
C
SYMBOLS
*1
V
RRM
(V)
40
V
RMS
*2
(V)
28
*3
V
R
(V)
40
*4
V
F
(V)
0.5@IF=3A
0.55@IF=5A
Operating
temperature
T
J
, (
O
C)
-55 to +125
Marking code
S54
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@I
F
=5.0A
FM540S-AL
http://www.formosams.com/
TEL:86-571-86690061
FAX:86-571-86696991
Document ID
Issued Date
2010/02/10
Revised Date
Revision
A
Page.
2
Page 1
DS-121628-H1
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