AS3019E datasheet, PDF - EEWORLD Datasheet

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AS3019E: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 8Ω @ 10mA, 4V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size504KB，4 Pages; ManufacturerANBON SEMICONDUCTOR; Websitehttp://www.formosagr.com/; Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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AS3019E Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 100mA Gate-source threshold voltage: 1.5V @ 250uA Drain-source on-resistance: 8Ω @ 10mA, 4V Maximum power dissipation (Ta =25°C): 150mW Type: N-channel

AS3019E Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	100mA
Gate-source threshold voltage	1.5V @ 250uA
Drain-source on-resistance	8Ω @ 10mA,4V
Maximum power dissipation (Ta=25°C)	150mW
type	N channel

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