RA201436XX datasheet, PDF - EEWORLD Datasheet

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RA201436XX: DescriptionRectifier Diode, 1 Phase, 1 Element, 4800A, 1400V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size360KB，4 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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RA201436XX Overview

Rectifier Diode, 1 Phase, 1 Element, 4800A, 1400V V(RRM), Silicon,

RA201436XX Parametric

Parameter Name	Attribute value
Objectid	1292885104
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	4.93
Other features	FREE WHEELING DIODE
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.15 V
JESD-30 code	O-CEDB-N2
Maximum non-repetitive peak forward current	40000 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-40 °C
Maximum output current	4800 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1400 V
Maximum reverse current	150000 µA
Maximum reverse recovery time	22 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED

RA201436XX Related Products

	RA201436XX	RA201636XX	RA201836XX	RA202036XX	RA201236XX
Description	Rectifier Diode, 1 Phase, 1 Element, 4800A, 1400V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 4800A, 1600V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 4800A, 1800V V(RRM), Silicon,	DIODE GP 2KV 3600A POWRDISC	Rectifier Diode, 1 Phase, 1 Element, 4800A, 1200V V(RRM), Silicon,
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	standard	RECTIFIER DIODE
Objectid	1292885104	1292885110	1292885116	-	1292885097
Reach Compliance Code	unknown	unknown	unknown	-	unknown
ECCN code	EAR99	EAR99	EAR99	-	EAR99
YTEOL	4.93	4.93	4.93	-	4.93
Other features	FREE WHEELING DIODE	FREE WHEELING DIODE	FREE WHEELING DIODE	-	FREE WHEELING DIODE
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	-	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE
Diode component materials	SILICON	SILICON	SILICON	-	SILICON
Maximum forward voltage (VF)	1.15 V	1.15 V	1.15 V	-	1.15 V
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	-	O-CEDB-N2
Maximum non-repetitive peak forward current	40000 A	40000 A	40000 A	-	40000 A
Number of components	1	1	1	-	1
Phase	1	1	1	-	1
Number of terminals	2	2	2	-	2
Maximum operating temperature	175 °C	175 °C	175 °C	-	175 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-	-40 °C
Maximum output current	4800 A	4800 A	4800 A	-	4800 A
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	-	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	-	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1400 V	1600 V	1800 V	-	1200 V
Maximum reverse current	150000 µA	150000 µA	150000 µA	-	150000 µA
Maximum reverse recovery time	22 µs	22 µs	22 µs	-	22 µs
surface mount	YES	YES	YES	-	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	-	NO LEAD
Terminal location	END	END	END	-	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED

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