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CMPDM303NH TR

Description
MOSFET N-CH 30V 3.6A SOT-23F
Categorysemiconductor    Discrete semiconductor   
File Size493KB,5 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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CMPDM303NH TR Overview

MOSFET N-CH 30V 3.6A SOT-23F

CMPDM303NH TR Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C3.6A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)2.5V,4.5V
Rds On (maximum value) when different Id, Vgs40 milliohms @ 1.8A, 4.5V
Vgs (th) (maximum value) when different Id1.2V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)13nC @ 4.5V
Vgs (maximum value)12V
Input capacitance (Ciss) at different Vds (maximum value)590pF @ 10V
FET function-
Power dissipation (maximum)350mW(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingSOT-23F
Package/casingSOT-23-3 flat lead
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