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SFA807GHC0G

Description
DIODE GEN PURP 500V 8A TO220AC
CategoryDiscrete semiconductor    diode   
File Size395KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SFA807GHC0G Overview

DIODE GEN PURP 500V 8A TO220AC

SFA807GHC0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
JESD-609 codee3
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage500 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

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