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UNR9219G0L

Description
TRANS PREBIAS NPN 125MW SSMINI3
Categorysemiconductor    Discrete semiconductor   
File Size510KB,20 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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UNR9219G0L Overview

TRANS PREBIAS NPN 125MW SSMINI3

UNR9219G0L Parametric

Parameter NameAttribute value
Transistor typeNPN - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)1 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)30 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 300µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition150MHz
Power - Max125mW
Installation typesurface mount
Package/casingSC-89,SOT-490
Supplier device packagingSS mini 3-F3

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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