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GBPC3508M T0G

Description
BRIDGE RECT 1P 800V 35A GBPC-M
Categorysemiconductor    Discrete semiconductor   
File Size253KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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GBPC3508M T0G Overview

BRIDGE RECT 1P 800V 35A GBPC-M

GBPC3508M T0G Parametric

Parameter NameAttribute value
Diode typeSimplex
technologystandard
Voltage - Peak Reverse (Maximum)800V
Current - average rectification (Io)35A
Voltage at different If - Forward (Vf1.1V @ 17.5A
Current at different Vr - Reverse leakage current5µA @ 800V
Operating temperature-55°C ~ 150°C(TJ)
Installation typeQC terminal
Package/casing4-Square,GBPC-M
Supplier device packagingGBPC-M

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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