SS320HM6G datasheet, PDF - EEWORLD Datasheet

SS320HM6G: DescriptionDIODE GEN PURP 200V 3A DO214AB; Categorysemiconductor Discrete semiconductor; File Size269KB，7 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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SS320HM6G Overview

DIODE GEN PURP 200V 3A DO214AB

Parameter Name	Attribute value
Diode type	standard
Voltage - DC Reverse (Vr) (Maximum)	200V
Current - average rectification (Io)	3A
Voltage at different If - Forward (Vf	850mV @ 3A
speed	Fast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current	100µA @ 200V
Capacitance at different Vr, F	-
Installation type	surface mount
Package/casing	DO-214AB，SMC
Supplier device packaging	DO-214AB（SMC）
Operating Temperature - Junction	-55°C ~ 150°C

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