MASMBJ9.0AE3 datasheet, PDF - EEWORLD Datasheet

MASMBJ9.0AE3: DescriptionTVS DIODE 9V 15.4V DO214AA; CategoryDiscrete semiconductor diode; File Size519KB，7 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MASMBJ9.0AE3 Overview

TVS DIODE 9V 15.4V DO214AA

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Microsemi
Parts packaging code	DO-214AA
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum breakdown voltage	11.1 V
Minimum breakdown voltage	10 V
Breakdown voltage nominal value	10.55 V
Maximum clamping voltage	15.4 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.38 W
Certification status	Not Qualified
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	9 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	40

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