SSM3K337R,LF datasheet, PDF - EEWORLD Datasheet

SSM3K337R,LF: DescriptionMOSFET N-CH 38V 2A; Categorysemiconductor Discrete semiconductor; File Size272KB，9 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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SSM3K337R,LF Overview

MOSFET N-CH 38V 2A

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	38V
Current - Continuous Drain (Id) at 25°C	2A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	4V，10V
Rds On (maximum value) when different Id, Vgs	150 milliohms @ 2A, 10V
Vgs (th) (maximum value) when different Id	1.7V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)	3nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	120pF @ 10V
FET function	-
Power dissipation (maximum)	1W（Ta）
Operating temperature	150°C（TJ）
Installation type	surface mount
Supplier device packaging	SOT-23F
Package/casing	SOT-23-3 flat lead

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