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IRFR3707TRR

Description
MOSFET N-CH 30V 61A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size139KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRFR3707TRR Overview

MOSFET N-CH 30V 61A DPAK

IRFR3707TRR Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C61A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs13 milliohms @ 15A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)19nC @ 4.5V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1990pF @ 15V
FET function-
Power dissipation (maximum)87W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63

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