IRF7451TR datasheet, PDF - EEWORLD Datasheet

IRF7451TR: DescriptionMOSFET N-CH 150V 3.6A 8-SOIC; CategoryDiscrete semiconductor The transistor; File Size213KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRF7451TR Overview

MOSFET N-CH 150V 3.6A 8-SOIC

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	SO-8
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	210 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	3.6 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MS-012AA
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	2
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	IRF7451TR	IRF7451
Description	MOSFET N-CH 150V 3.6A 8-SOIC	MOSFET N-CH 150V 3.6A 8-SOIC
Is it Rohs certified?	incompatible	incompatible
Maker	Infineon	Infineon
package instruction	SO-8	SO-8
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	210 mJ	210 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V
Maximum drain current (ID)	3.6 A	3.6 A
Maximum drain-source on-resistance	0.09 Ω	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MS-012AA	MS-012AA
JESD-30 code	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e3	e0
Humidity sensitivity level	2	1
Number of components	1	1
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	245
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	28 A	28 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	TIN LEAD
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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