|
HUF75329S3 |
HUF75329P3 |
HUF75329G3 |
Description |
MOSFET N-CH 55V 49A D2PAK |
MOSFET N-CH 55V 49A TO-220AB |
MOSFET N-CH 55V 49A TO-247 |
FET type |
N channel |
N channel |
N channel |
technology |
MOSFET (metal oxide) |
MOSFET (metal oxide) |
MOSFET (metal oxide) |
Drain-source voltage (Vdss) |
55V |
55V |
55V |
Current - Continuous Drain (Id) at 25°C |
49A(Tc) |
49A(Tc) |
49A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) |
10V |
10V |
10V |
Rds On (maximum value) when different Id, Vgs |
24 milliohms @ 49A, 10V |
24 milliohms @ 49A, 10V |
24 milliohms @ 49A, 10V |
Vgs (th) (maximum value) when different Id |
4V @ 250µA |
4V @ 250µA |
4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum value) |
75nC @ 20V |
75nC @ 20V |
75nC @ 20V |
Vgs (maximum value) |
±20V |
±20V |
±20V |
Input capacitance (Ciss) at different Vds (maximum value) |
1060pF @ 25V |
1060pF @ 25V |
1060pF @ 25V |
Power dissipation (maximum) |
128W(Tc) |
128W(Tc) |
128W(Tc) |
Operating temperature |
-55°C ~ 175°C(TJ) |
-55°C ~ 175°C(TJ) |
-55°C ~ 175°C(TJ) |
Installation type |
surface mount |
Through hole |
Through hole |
Supplier device packaging |
D²PAK(TO-263AB) |
TO-220AB |
TO-247 |
Package/casing |
TO-263-3, D²Pak (2-lead + tab), TO-263AB |
TO-220-3 |
TO-247-3 |