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IXYN75N65C3D1

Description
IGBT
Categorysemiconductor    Discrete semiconductor   
File Size225KB,7 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXYN75N65C3D1 Overview

IGBT

IXYN75N65C3D1 Parametric

Parameter NameAttribute value
IGBT type-
Voltage - collector-emitter breakdown (maximum)650V
Current - Collector (Ic) (Maximum)150A
Pulse current - collector (Icm)360A
Vce(on) when different Vge,Ic2.3V @ 15V,60A
Power - Max600W
switching energy2mJ (on), 950µJ (off)
input typestandard
gate charge122nC
Td (on/off) value at 25°C26ns/93ns
Test Conditions400V, 60A, 3 ohms, 15V
Reverse recovery time (trr)65ns
Operating temperature-55°C ~ 175°C(TJ)
Installation typeBase installation
Package/casingSOT-227-4,miniBLOC
Supplier device packagingSOT-227B

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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