P-Channel Enhancement Mode Field Effect Transistor
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Alpha & Omega Semiconductor |
package instruction | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code | compli |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (Abs) (ID) | 5 A |
Maximum drain current (ID) | 5 A |
Maximum drain-source on-resistance | 0.047 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 80 pF |
JESD-30 code | R-PDSO-G6 |
Number of components | 1 |
Number of terminals | 6 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | P-CHANNEL |
Maximum power consumption environment | 2 W |
Maximum power dissipation(Abs) | 2 W |
Maximum pulsed drain current (IDM) | 28 A |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |