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AO6401

Description
P-Channel Enhancement Mode Field Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size106KB,4 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Environmental Compliance
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AO6401 Overview

P-Channel Enhancement Mode Field Effect Transistor

AO6401 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAlpha & Omega Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompli
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.047 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)80 pF
JESD-30 codeR-PDSO-G6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power consumption environment2 W
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)28 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

AO6401 Related Products

AO6401 AO6401L
Description P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductor Alpha & Omega Semiconductor
Reach Compliance Code compli compli

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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