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BR25H020F-WE2

Description
HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type
Categorystorage    storage   
File Size1MB,17 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BR25H020F-WE2 Overview

HIGH GRADE Specification HIGH RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V Operating temperature -40∑C ~ +125∑C type

BR25H020F-WE2 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instructionLEAD FREE, SOP-8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Maximum clock frequency (fCLK)5 MHz
JESD-30 codeR-PDSO-G8
JESD-609 codee2
length5 mm
memory density2048 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize256X8
Package body materialPLASTIC/EPOXY
encapsulated codeLSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, LOW PROFILE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.6 mm
Serial bus typeSPI
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTIN COPPER
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature10
width4.4 mm
Maximum write cycle time (tWC)5 ms
Base Number Matches1

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