|
IKP15N65F5 |
IKP15N65F5XKSA1 |
Description |
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT |
IGBT Transistors IGBT PRODUCTS |
Product Attribute |
Attribute Value |
Attribute Value |
Manufacturer |
Infineon |
Infineon |
Product Category |
IGBT Transistors |
IGBT Transistors |
Technology |
Si |
Si |
Package / Case |
TO-220-3 |
TO-220-3 |
Mounting Style |
Through Hole |
Through Hole |
Configuration |
Single |
Single |
Collector- Emitter Voltage VCEO Max |
650 V |
650 V |
Collector-Emitter Saturation Voltage |
1.6 V |
1.6 V |
Maximum Gate Emitter Voltage |
+/- 20 V |
+/- 20 V |
Continuous Collector Current at 25 C |
30 A |
30 A |
Pd - Power Dissipation |
105 W |
105 W |
Minimum Operating Temperature |
- 40 C |
- 40 C |
Maximum Operating Temperature |
+ 175 C |
+ 175 C |
Packaging |
Tube |
Tube |
Gate-Emitter Leakage Current |
100 nA |
100 nA |
Factory Pack Quantity |
500 |
500 |
Unit Weight |
0.081130 oz |
0.211644 oz |