IPU06N03LAG datasheet, PDF - EEWORLD Datasheet

IPU06N03LAG: DescriptionMOSFET N-Ch 25V 50A IPAK-3; CategoryDiscrete semiconductor The transistor; File Size626KB，18 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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MOSFET N-Ch 25V 50A IPAK-3

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-251AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	225 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (Abs) (ID)	50 A
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.0096 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	83 W
Maximum pulsed drain current (IDM)	350 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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