MPS5179_Q datasheet, PDF - EEWORLD Datasheet

MPS5179_Q: DescriptionBipolar Transistors - BJT NPN RF Transistor; Categorysemiconductor Discrete semiconductor; File Size484KB，12 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Bipolar Transistors - BJT NPN RF Transistor

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS	N
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	12 V
Collector- Base Voltage VCBO	20 V
Emitter- Base Voltage VEBO	2.5 V
Maximum DC Collector Current	0.05 A
Gain Bandwidth Product fT	2 GHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Height	5.33 mm
Length	5.2 mm
Packaging	Bulk
Width	4.19 mm
Continuous Collector Current	0.05 A
DC Collector/Base Gain hfe Min	25
Pd - Power Dissipation	200 mW (1/5 W)
Unit Weight	0.008466 oz

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