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MMRF1304NR1

Description
RF MOSFET Transistors 1.8 - 2000 MHz 25 W 50 V
CategoryDiscrete semiconductor    The transistor   
File Size451KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MMRF1304NR1 Overview

RF MOSFET Transistors 1.8 - 2000 MHz 25 W 50 V

MMRF1304NR1 Parametric

Parameter NameAttribute value
Brand NameFreescale
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerNXP
package instructionFLATPACK, R-PDFP-F2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage133 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.26 pF
highest frequency bandL BAND
JEDEC-95 codeTO-270AA
JESD-30 codeR-PDFP-F2
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)24 dB
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

MMRF1304NR1 Related Products

MMRF1304NR1 MMRF1304GNR1
Description RF MOSFET Transistors 1.8 - 2000 MHz 25 W 50 V RF MOSFET Transistors 1.8 - 2000 MHz 25 W 50 V
Brand Name Freescale Freescale
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker NXP NXP
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
JESD-609 code e3 e3
Humidity sensitivity level 3 3
Peak Reflow Temperature (Celsius) 260 260
Terminal surface Matte Tin (Sn) MATTE TIN
Maximum time at peak reflow temperature 40 40

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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