KSC1507OTU datasheet, PDF - EEWORLD Datasheet

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KSC1507OTU: DescriptionBipolar Transistors - BJT NPN Epitaxial Sil; Categorysemiconductor Discrete semiconductor; File Size40KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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KSC1507OTU Overview

Bipolar Transistors - BJT NPN Epitaxial Sil

KSC1507OTU Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	300 V
Collector- Base Voltage VCBO	300 V
Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	2 V
Maximum DC Collector Current	0.2 A
Gain Bandwidth Product fT	80 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	240
Height	9.4 mm (Max)
Length	10.1 mm (Max)
Packaging	Tube
Width	4.7 mm (Max)
Continuous Collector Current	0.2 mA
DC Collector/Base Gain hfe Min	40
Pd - Power Dissipation	15 W
Factory Pack Quantity	50
Unit Weight	0.080072 oz

KSC1507OTU Related Products

	KSC1507OTU	KSC1507O	KSC1507YTSTU	KSC1507Y
Description	Bipolar Transistors - BJT NPN Epitaxial Sil	Bipolar Transistors - BJT NPN Epitaxial Sil	Bipolar Transistors - BJT NPN Si Epitaxial Short Leads	Bipolar Transistors - BJT NPN Epitaxial Sil
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value
Manufacturer	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Details	Details	Details	Details
Mounting Style	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Transistor Polarity	NPN	NPN	NPN	NPN
Configuration	Single	Single	Single	Single
Collector- Emitter Voltage VCEO Max	300 V	300 V	300 V	300 V
Collector- Base Voltage VCBO	300 V	300 V	300 V	300 V
Emitter- Base Voltage VEBO	7 V	7 V	7 V	7 V
Collector-Emitter Saturation Voltage	2 V	2 V	2 V	2 V
Maximum DC Collector Current	0.2 A	0.2 A	0.2 A	0.2 A
Gain Bandwidth Product fT	80 MHz	80 MHz	80 MHz	80 MHz
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C
DC Current Gain hFE Max	240	240	240	240
Height	9.4 mm (Max)	9.4 mm (Max)	9.4 mm (Max)	9.4 mm (Max)
Length	10.1 mm (Max)	10.1 mm (Max)	10.1 mm (Max)	10.1 mm (Max)
Packaging	Tube	Bulk	Tube	Bulk
Width	4.7 mm (Max)	4.7 mm (Max)	4.7 mm (Max)	4.7 mm (Max)
Continuous Collector Current	0.2 mA	0.2 mA	0.2 mA	0.2 mA
DC Collector/Base Gain hfe Min	40	40	40	40
Pd - Power Dissipation	15 W	15 W	15 W	15 W
Factory Pack Quantity	50	200	50	200
Unit Weight	0.080072 oz	0.080072 oz	0.080072 oz	0.080072 oz

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