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IKP15N65F5XKSA1

Description
IGBT Transistors IGBT PRODUCTS
Categorysemiconductor    Discrete semiconductor   
File Size2MB,17 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IKP15N65F5XKSA1 Overview

IGBT Transistors IGBT PRODUCTS

IKP15N65F5XKSA1 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryIGBT Transistors
RoHSDetails
TechnologySi
Package / CaseTO-220-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.6 V
Maximum Gate Emitter Voltage+/- 20 V
Continuous Collector Current at 25 C30 A
Pd - Power Dissipation105 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
PackagingTube
Gate-Emitter Leakage Current100 nA
Factory Pack Quantity500
Unit Weight0.211644 oz

IKP15N65F5XKSA1 Related Products

IKP15N65F5XKSA1 IKP15N65F5
Description IGBT Transistors IGBT PRODUCTS IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
Product Attribute Attribute Value Attribute Value
Manufacturer Infineon Infineon
Product Category IGBT Transistors IGBT Transistors
Technology Si Si
Package / Case TO-220-3 TO-220-3
Mounting Style Through Hole Through Hole
Configuration Single Single
Collector- Emitter Voltage VCEO Max 650 V 650 V
Collector-Emitter Saturation Voltage 1.6 V 1.6 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 30 A 30 A
Pd - Power Dissipation 105 W 105 W
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 175 C + 175 C
Packaging Tube Tube
Gate-Emitter Leakage Current 100 nA 100 nA
Factory Pack Quantity 500 500
Unit Weight 0.211644 oz 0.081130 oz
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