75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 75 A |
| Maximum drain current (ID) | 75 A |
| Maximum drain-source on-resistance | 0.014 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 310 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| HUF75645S3S | HUF75645P3 | HUF75645S3ST | 25NHG000B-690 | |
|---|---|---|---|---|
| Description | 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 690 Volts gG/gL NH Fuse links |
| Is it Rohs certified? | incompatible | incompatible | incompatible | - |
| Maker | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation | - |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | - |
| ECCN code | EAR99 | EAR99 | EAR99 | - |
| Shell connection | DRAIN | DRAIN | DRAIN | - |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | - |
| Maximum drain current (Abs) (ID) | 75 A | 75 A | 75 A | - |
| Maximum drain current (ID) | 75 A | 75 A | 75 A | - |
| Maximum drain-source on-resistance | 0.014 Ω | 0.014 Ω | 0.014 Ω | - |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95 code | TO-263AB | TO-220AB | TO-263AB | - |
| JESD-30 code | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 | - |
| JESD-609 code | e0 | e0 | e0 | - |
| Number of components | 1 | 1 | 1 | - |
| Number of terminals | 2 | 3 | 2 | - |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| Package form | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | - |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| Maximum power dissipation(Abs) | 310 W | 310 W | 310 W | - |
| Certification status | Not Qualified | Not Qualified | Not Qualified | - |
| surface mount | YES | NO | YES | - |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| Terminal form | GULL WING | THROUGH-HOLE | GULL WING | - |
| Terminal location | SINGLE | SINGLE | SINGLE | - |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | - |
| Transistor component materials | SILICON | SILICON | SILICON | - |
| Base Number Matches | 1 | 1 | 1 | - |
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