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MCH6628

Description
General-Purpose Switching Device Applications
CategoryDiscrete semiconductor    The transistor   
File Size51KB,6 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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MCH6628 Overview

General-Purpose Switching Device Applications

MCH6628 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)0.35 A
Maximum drain current (ID)0.35 A
Maximum drain-source on-resistance3.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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