IRGB4064DPBF datasheet, PDF - EEWORLD Datasheet

IRGB4064DPBF: DescriptionINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; CategoryDiscrete semiconductor The transistor; File Size370KB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-220AB
package instruction	LEAD FREE PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	30 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	250
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	101 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	131 ns
Nominal on time (ton)	43 ns
Base Number Matches	1

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