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2SB806-T1-AZ

Description
2SB806-T1-AZ
CategoryDiscrete semiconductor    The transistor   
File Size357KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SB806-T1-AZ Overview

2SB806-T1-AZ

2SB806-T1-AZ Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codePOMM
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Manufacturer packaging codePLZZ0004CC-A3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)75 MHz
Base Number Matches1

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