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2SB649C(TO-126)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size248KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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2SB649C(TO-126) Overview

Transistor

2SB649C(TO-126) Parametric

Parameter NameAttribute value
MakerJCET
package instruction,
Reach Compliance Codeunknown
Base Number Matches1

2SB649C(TO-126) Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SB649/2SB649A
TRANSISTOR
(PNP)
TO- 126
FEATURES
Low Frequency Power Amplifier Complementary Pair
with 2SD669/A
1. EMITTER
MAXIMUM RATINGS (T
a
=25
unless otherwise noted)
Symbol
V
CBO
V
CEO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
2SB649
2SB649A
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-120
-160
-5
-1.5
1
150
-55-150
V
A
W
V
Value
-180
Unit
V
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE
unless otherwise specified)
Test
conditions
Min
Typ
Max
Unit
V
V
V
I
C
=
-1
mA,I
E
=0
I
C
=
-10
mA,I
B
=0
2SB649
2SB649A
I
E
=
-1m
A, I
C
=0
V
CB
=
-160
V,I
E
=0
V
EB
=
-4
V,I
C
=0
V
CE
=-5V,I
C
=
-150
mA
2SB649
2SB649A
V
CE
=
-5
V,I
C
=
-500
mA
I
C
=
-500
mA,I
B
=
-50
mA
V
CE
=
-5
V,I
C
=
-150
mA
V
CE
=
-5
V,I
C
=
-150
mA
V
CB
=
-10
V,I
E
=0,f=
1
MHz
-180
-120
-160
-5
-10
-10
60
60
30
-1
-1.5
140
27
D
160-320
320
200
µA
µA
DC current gain
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
2SB649
2SB649A
h
FE(1)
B
60-120
60-120
C
100-200
100-200
A,Jun,2011
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