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FQB5N50CFTF

Description
500V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size699KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FQB5N50CFTF Overview

500V N-Channel MOSFET

FQB5N50CFTF Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance1.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)96 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

FQB5N50CFTF Related Products

FQB5N50CFTF FQB5N50CF FQB5N50CFTM
Description 500V N-Channel MOSFET 500V N-Channel MOSFET 500V N-Channel MOSFET
Maker Fairchild - Fairchild
Parts packaging code D2PAK - D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2
Contacts 3 - 3
Reach Compliance Code unknown - unknown
Avalanche Energy Efficiency Rating (Eas) 300 mJ - 300 mJ
Shell connection DRAIN - DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V - 500 V
Maximum drain current (Abs) (ID) 5 A - 5 A
Maximum drain current (ID) 5 A - 5 A
Maximum drain-source on-resistance 1.55 Ω - 1.55 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB - TO-263AB
JESD-30 code R-PSSO-G2 - R-PSSO-G2
Number of components 1 - 1
Number of terminals 2 - 2
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Polarity/channel type N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 96 W - 96 W
Maximum pulsed drain current (IDM) 20 A - 20 A
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal form GULL WING - GULL WING
Terminal location SINGLE - SINGLE
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Base Number Matches 1 - 1
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