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FQB5N50CF

Description
500V N-Channel MOSFET
File Size699KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FQB5N50CF Overview

500V N-Channel MOSFET

FQB5N50CF Related Products

FQB5N50CF FQB5N50CFTF FQB5N50CFTM
Description 500V N-Channel MOSFET 500V N-Channel MOSFET 500V N-Channel MOSFET
Maker - Fairchild Fairchild
Parts packaging code - D2PAK D2PAK
package instruction - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts - 3 3
Reach Compliance Code - unknown unknown
Avalanche Energy Efficiency Rating (Eas) - 300 mJ 300 mJ
Shell connection - DRAIN DRAIN
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 500 V 500 V
Maximum drain current (Abs) (ID) - 5 A 5 A
Maximum drain current (ID) - 5 A 5 A
Maximum drain-source on-resistance - 1.55 Ω 1.55 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-263AB TO-263AB
JESD-30 code - R-PSSO-G2 R-PSSO-G2
Number of components - 1 1
Number of terminals - 2 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 96 W 96 W
Maximum pulsed drain current (IDM) - 20 A 20 A
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - SINGLE SINGLE
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1

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