500V N-Channel MOSFET
FQB5N50CF | FQB5N50CFTF | FQB5N50CFTM | |
---|---|---|---|
Description | 500V N-Channel MOSFET | 500V N-Channel MOSFET | 500V N-Channel MOSFET |
Maker | - | Fairchild | Fairchild |
Parts packaging code | - | D2PAK | D2PAK |
package instruction | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Contacts | - | 3 | 3 |
Reach Compliance Code | - | unknown | unknown |
Avalanche Energy Efficiency Rating (Eas) | - | 300 mJ | 300 mJ |
Shell connection | - | DRAIN | DRAIN |
Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | - | 500 V | 500 V |
Maximum drain current (Abs) (ID) | - | 5 A | 5 A |
Maximum drain current (ID) | - | 5 A | 5 A |
Maximum drain-source on-resistance | - | 1.55 Ω | 1.55 Ω |
FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | - | TO-263AB | TO-263AB |
JESD-30 code | - | R-PSSO-G2 | R-PSSO-G2 |
Number of components | - | 1 | 1 |
Number of terminals | - | 2 | 2 |
Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | - | 150 °C | 150 °C |
Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | - | RECTANGULAR | RECTANGULAR |
Package form | - | SMALL OUTLINE | SMALL OUTLINE |
Polarity/channel type | - | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | - | 96 W | 96 W |
Maximum pulsed drain current (IDM) | - | 20 A | 20 A |
Certification status | - | Not Qualified | Not Qualified |
surface mount | - | YES | YES |
Terminal form | - | GULL WING | GULL WING |
Terminal location | - | SINGLE | SINGLE |
transistor applications | - | SWITCHING | SWITCHING |
Transistor component materials | - | SILICON | SILICON |
Base Number Matches | - | 1 | 1 |