2N7000KL-TR1 datasheet, PDF - EEWORLD Datasheet

2N7000KL-TR1: DescriptionMOSFET 60V (DS) .47A .8W; CategoryDiscrete semiconductor The transistor; File Size60KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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MOSFET 60V (DS) .47A .8W

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.47 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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