AP2623GY datasheet, PDF - EEWORLD Datasheet

AP2623GY: DescriptionP-CHANNEL ENHANCEMENT MODE POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size71KB，4 Pages; ManufacturerAPEC

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AP2623GY Overview

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Parameter Name	Attribute value
Maker	APEC
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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