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SI4496DY-T1-E3

Description
MOSFET 100V 7.7A 3.1W
CategoryDiscrete semiconductor    The transistor   
File Size64KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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MOSFET 100V 7.7A 3.1W

SI4496DY-T1-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)4.6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.1 W
surface mountYES
Terminal surfaceMatte Tin (Sn)

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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