K6R4008V1D-UC08 datasheet, PDF

K6R4008V1D-UC08: Description512K X 8 STANDARD SRAM, 10 ns, PDSO36; Categorystorage storage; File Size143KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K6R4008V1D-UC08 Overview

512K X 8 STANDARD SRAM, 10 ns, PDSO36

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	TSOP, TSOP44,.46,32
Reach Compliance Code	unknow
Maximum access time	8 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G44
JESD-609 code	e1
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of terminals	44
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Minimum standby current	3 V
Maximum slew rate	0.08 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN SILVER COPPER
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40

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