Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | NEC Electronics |
Parts packaging code | SC-59 |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 0.2 A |
Maximum drain-source on-resistance | 30 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |
2SJ211-T1B | 2SJ211-T2B | |
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Description | Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN | Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-59, 3 PIN |
Is it Rohs certified? | incompatible | incompatible |
Maker | NEC Electronics | NEC Electronics |
Parts packaging code | SC-59 | SC-59 |
package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 | 3 |
Reach Compliance Code | compliant | compliant |
ECCN code | EAR99 | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V | 100 V |
Maximum drain current (ID) | 0.2 A | 0.2 A |
Maximum drain-source on-resistance | 30 Ω | 30 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G3 | R-PDSO-G3 |
JESD-609 code | e0 | e0 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | P-CHANNEL | P-CHANNEL |
Certification status | Not Qualified | Not Qualified |
surface mount | YES | YES |
Terminal surface | TIN LEAD | TIN LEAD |
Terminal form | GULL WING | GULL WING |
Terminal location | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON |
Base Number Matches | 1 | 1 |