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BZX55C3V6C-35B

Description
Zener Diode, 3.6V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size74KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZX55C3V6C-35B Overview

Zener Diode, 3.6V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2

BZX55C3V6C-35B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionROHS COMPLIANT, GLASS PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance85 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage3.6 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
Base Number Matches1

BZX55C3V6C-35B Preview

Download Datasheet
BZX55C2V4~BZX55C100
AXIAL LEAD ZENER DIODES
VOLTAGE
2.4 to 100 Volts
POWER
500 mWatts
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Molded glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix :” -35” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Symbol
3.0
Value
500
175
-65 to +175
Units
mW
O
C
P
TOT
T
J
T
s
C
C
O
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage at I
F
= 100mA
Symbol
Min.
--
--
Typ.
Max.
0.3
1
Units
K/mW
V
R
θ
JA
V
F
--
--
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
STAD-FEB.10.2009
1
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