EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

IRFS4410

Description
HEXFET Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size800KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRFS4410 Overview

HEXFET Power MOSFET

IRFS4410 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)220 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)96 A
Maximum drain current (ID)96 A
Maximum drain-source on-resistance0.01 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)380 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

IRFS4410 Related Products

IRFS4410 IRFS4410TRR IRFS4410TRRPBF IRFS4410TRL
Description HEXFET Power MOSFET Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code compliant unknown compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 220 mJ 220 mJ 220 mJ 220 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V 100 V
Maximum drain current (ID) 96 A 96 A 75 A 96 A
Maximum drain-source on-resistance 0.01 Ω 0.01 Ω 0.01 Ω 0.01 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0 e3 e0
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225 260 260 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 380 A 380 A 380 A 380 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface TIN LEAD TIN LEAD MATTE TIN TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED 30 30
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
Is it Rohs certified? incompatible - conform to incompatible
Parts packaging code D2PAK D2PAK - D2PAK
JEDEC-95 code TO-263AB TO-263AB - TO-263AB
Shenying series SY-Y1000 intelligent partition long-range laser perimeter warning radar
[align=center][color=rgb(34, 34, 34)][font="][size=14px] [b][color=#5E7384]This content is originally created by [size=3]无限龙神[/size], a user of EEWORLD forum. If you need to reprint or use it for comm...
无限龙神 Security Electronics
DSP online upgrade procedure steps
Target board: C2000 28335/28069 I. Main ideas:1. Prepare an upgrade program (equivalent to a bootloader) as the first program to run when powered on. Enter the upgrade program, first determine whether...
灞波儿奔 DSP and ARM Processors
The nonlinearity of the diode will cause some new waveforms to be generated. What is the underlying formation principle? Who can explain it to me?
The nonlinearity of the diode will cause some new waveforms to be generated. What is the underlying formation principle? Who can explain it to me?...
一沙一世 stm32/stm8
The role of each layer in the Gerber file when making a steel mesh
1) The size of the pads of the patch layer and the circuit layer is consistent with the size of the pads of the bare copper of the physical PCB. This is the basis for the size of the opening (a necess...
szjlczhang PCB Design
The weekly review information is here~ The fresh delivery is here
Last week, the TI evaluation was launched. This week, our Lingdong Microelectronics eminiboard evaluation is also about to be launched. Many evaluation reports have been released this week. Come and h...
okhxyyo Special Edition for Assessment Centres
STM32F030 AD signal acquisition
The signal generator outputs two 10KHZ sine wave signals at the same time, which are added to the channel 0 and channel 2 of the single-chip microcomputer (MCU uses STM32F030C8T6) and collected altern...
lyx_wq stm32/stm8

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号