Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD, 3 PIN
Parameter Name | Attribute value |
Parts packaging code | TO-92 |
package instruction | CYLINDRICAL, O-PBCY-T3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 1 A |
Collector-emitter maximum voltage | 80 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 100 |
JESD-30 code | O-PBCY-T3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | PNP |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 140 MHz |
Base Number Matches | 1 |
2SB647CTZ | 2SB647BTZ | 2SB647DTZ | 2SB647ACTZ | 2SB647ABTZ | |
---|---|---|---|---|---|
Description | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-92MOD, 3 PIN |
Parts packaging code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Contacts | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A |
Collector-emitter maximum voltage | 80 V | 80 V | 80 V | 100 V | 100 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 100 | 60 | 160 | 100 | 60 |
JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
Number of components | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | PNP | PNP | PNP | PNP | PNP |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 140 MHz | 140 MHz | 140 MHz | 140 MHz | 140 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 |