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IRFC9120

Description
Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size23KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRFC9120 Overview

Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

IRFC9120 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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