BZQ55-C51B datasheet, PDF - EEWORLD Datasheet

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BZQ55-C51B: DescriptionZener Diode, 51V V(Z), 2%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, QUADROMELF-2; CategoryDiscrete semiconductor diode; File Size103KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZQ55-C51B Overview

Zener Diode, 51V V(Z), 2%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, QUADROMELF-2

BZQ55-C51B Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JESD-30 code	O-LELF-R2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Nominal reference voltage	51 V
surface mount	YES
technology	ZENER
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	2%
Working test current	2.5 mA
Base Number Matches	1

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BZQ55-C2V4 SERIES

SURFACE MOUNT ZENER DIODES

VOLTAGE

2.4 to 100 Volts

POWER

500 mWatts

QUADRO-MELF

Unit : inch (mm)

FEATURES

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

)

• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

• Case: Molded Glass QUADRO-MELF

• Terminals: Solderable per MIL-STD-750, Method 2026

• Polarity: See Diagram Below

• Approx. Weight: 0.008 grams

• Mounting Position: Any

• Packing information

T/R - 2.5K per 7" plastic Reel

.020(0.5)

.012(0.3)

.146(3.7)

.130(3.3)

.020(0.5)

.012(0.3)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Power Dissipation at Tamb = 25

Junction Temperature

Storage Temperature Range

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Symbol

Value

500

175

-65 to +175

Units

TOT

Parameter

Thermal Resi stance Juncti on to Ambi ent Ai r

Forward Voltage at I

= 200mA

Symbol

Min.

Typ.

Max.

0.3

1.5

Uni ts

K/mW

θJA

Vali d provi ded that leads at a di stance of 8mm from case are kept at ambi ent temperature.

STAD-JAN.21.2009

.063(1.6)

.055(1.4)DIA.

PAGE . 1

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