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AS7C33512NTD36A-250BI

Description
ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, BGA-165
Categorystorage    storage   
File Size367KB,19 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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AS7C33512NTD36A-250BI Overview

ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, BGA-165

AS7C33512NTD36A-250BI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instructionTBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time6.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Number of functions1
Number of terminals165
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
Base Number Matches1

AS7C33512NTD36A-250BI Related Products

AS7C33512NTD36A-250BI AS7C33512NTD36A-250TQI
Description ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA165, BGA-165 ZBT SRAM, 512KX36, 6.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Parts packaging code BGA QFP
package instruction TBGA, LQFP,
Contacts 165 100
Reach Compliance Code compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A
Maximum access time 6.5 ns 6.5 ns
Other features FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 code R-PBGA-B165 R-PQFP-G100
JESD-609 code e0 e0
length 15 mm 20 mm
memory density 18874368 bit 18874368 bit
Memory IC Type ZBT SRAM ZBT SRAM
memory width 36 36
Number of functions 1 1
Number of terminals 165 100
word count 524288 words 524288 words
character code 512000 512000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
organize 512KX36 512KX36
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TBGA LQFP
Package shape RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.6 mm
Maximum supply voltage (Vsup) 3.465 V 3.465 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount YES YES
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal surface TIN LEAD TIN LEAD
Terminal form BALL GULL WING
Terminal pitch 1 mm 0.65 mm
Terminal location BOTTOM QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
width 13 mm 14 mm

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