IRF2807STRR datasheet, PDF - EEWORLD Datasheet

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IRF2807STRR: DescriptionPower Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size122KB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRF2807STRR Overview

Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

IRF2807STRR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	340 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (Abs) (ID)	82 A
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.013 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum power dissipation(Abs)	230 W
Maximum pulsed drain current (IDM)	280 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

IRF2807STRR Related Products

	IRF2807STRR	IRF2807STRL
Description	Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3	Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Is it Rohs certified?	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	340 mJ	340 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V	75 V
Maximum drain current (ID)	75 A	75 A
Maximum drain-source on-resistance	0.013 Ω	0.013 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	280 A	280 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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