IPP120N08S4-03 datasheet, PDF - EEWORLD Datasheet

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IPP120N08S4-03: DescriptionMOSFET MOSFET_(75V,120V(; CategoryDiscrete semiconductor The transistor; File Size225KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPP120N08S4-03 Overview

MOSFET MOSFET_(75V,120V(

IPP120N08S4-03 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	GREEN, PLASTIC, TO-220, 3 PIN
Reach Compliance Code	not_compliant
Avalanche Energy Efficiency Rating (Eas)	920 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	120 A
Maximum drain-source on-resistance	0.0028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	480 A
Guideline	AEC-Q101
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

IPP120N08S4-03 Related Products

	IPP120N08S4-03	IPB120N08S4-03	IPI120N08S4-03
Description	MOSFET MOSFET_(75V,120V(	MOSFET MOSFET_(75V,120V(	MOSFET MOSFET_(75V,120V(
Is it Rohs certified?	conform to	conform to	conform to
Maker	Infineon	Infineon	Infineon
package instruction	GREEN, PLASTIC, TO-220, 3 PIN	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Reach Compliance Code	not_compliant	compliant	not_compliant
Avalanche Energy Efficiency Rating (Eas)	920 mJ	920 mJ	920 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	80 V	80 V
Maximum drain current (ID)	120 A	120 A	120 A
Maximum drain-source on-resistance	0.0028 Ω	0.0025 Ω	0.0028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-263AB	TO-262AA
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSIP-T3
Number of components	1	1	1
Number of terminals	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	480 A	480 A	480 A
Guideline	AEC-Q101	AEC-Q101	AEC-Q101
surface mount	NO	YES	NO
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Humidity sensitivity level	-	1	1

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