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DF04-G

Description
Development Boards u0026 Kits - ARM 32F769IDISCOVERY Discovery Kit
CategoryDiscrete semiconductor    diode   
File Size55KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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DF04-G Overview

Development Boards u0026 Kits - ARM 32F769IDISCOVERY Discovery Kit

DF04-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionR-PDIP-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage400 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDIP-T4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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DF04-G DF10-G DF06-G DF005-G
Description Development Boards u0026 Kits - ARM 32F769IDISCOVERY Discovery Kit Power Switch ICs - Power Distribution Automotive Relays 1 FORM CX2 SEPARATE Bridge Rectifiers DF GPP 1A 50V Rect. Bridge Diode
Is it Rohs certified? conform to conform to conform to conform to
package instruction R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 400 V 1000 V 600 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 400 V 1000 V 600 V 50 V
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker Comchip Technology - Comchip Technology Comchip Technology
Base Number Matches 1 1 - 1
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