Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
STP150N10F7 | STMicroelectronics | Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 110A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 4.2mΩ @ 55A, 10V Maximum power Dissipation (Ta=25°C): 250W(Tc) Type: N-channel | Download |
STP150N10F7 | ISC | isc N-Channel MOSFET Transistor | Download |
漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):110A(Tc) 栅源极阈值电压:4.5V @ 250uA 漏源导通电阻:4.2mΩ @ 55A,10V 最大功率耗散(Ta=25°C):250W(Tc) 类型:N沟道
Parameter Name | Attribute value |
Drain-source voltage (Vdss) | 100V |
Continuous drain current (Id) at 25°C | 110A(Tc) |
Gate-source threshold voltage | 4.5V @ 250uA |
Drain-source on-resistance | 4.2mΩ @ 55A,10V |
Maximum power dissipation (Ta=25°C) | 250W(Tc) |
type | N channel |