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stp150n10

Among 2 related components, stp150n10 have related pdf.
Part Number Manufacturer Description Datasheet
STP150N10F7 STMicroelectronics Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 110A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 4.2mΩ @ 55A, 10V Maximum power Dissipation (Ta=25°C): 250W(Tc) Type: N-channel Download
STP150N10F7 ISC isc N-Channel MOSFET Transistor Download
stp150n10 parameters:

Description

漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):110A(Tc) 栅源极阈值电压:4.5V @ 250uA 漏源导通电阻:4.2mΩ @ 55A,10V 最大功率耗散(Ta=25°C):250W(Tc) 类型:N沟道

Parametric
Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C110A(Tc)
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance4.2mΩ @ 55A,10V
Maximum power dissipation (Ta=25°C)250W(Tc)
typeN channel

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