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ixfh13n80

Among 5 related components, ixfh13n80 have related pdf.
Part Number Manufacturer Description Datasheet
IXFH13N80 IXYS ( Littelfuse ) MOSFET 800V 13A Download
IXFH13N80 IXYS Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Download
IXFH13N80 Littelfuse Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Download
IXFH13N80Q IXYS ( Littelfuse ) MOSFET 13 Amps 800V 0.8 Rds Download
IXFH13N80Q IXYS Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Download
ixfh13n80 parameters:

Description

Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
Other featuresAVALANCHE RATED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (Abs) (ID)13 A
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment300 W
Maximum power dissipation(Abs)300 W
Maximum pulsed drain current (IDM)52 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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