Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IXFH13N80 | IXYS ( Littelfuse ) | MOSFET 800V 13A | Download |
IXFH13N80 | IXYS | Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Download |
IXFH13N80 | Littelfuse | Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Download |
IXFH13N80Q | IXYS ( Littelfuse ) | MOSFET 13 Amps 800V 0.8 Rds | Download |
IXFH13N80Q | IXYS | Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Download |
Power Field-Effect Transistor, 13A I(D), 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Littelfuse |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compli |
Other features | AVALANCHE RATED |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 800 V |
Maximum drain current (Abs) (ID) | 13 A |
Maximum drain current (ID) | 13 A |
Maximum drain-source on-resistance | 0.8 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-247 |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 300 W |
Maximum power dissipation(Abs) | 300 W |
Maximum pulsed drain current (IDM) | 52 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |