Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
IRFB3607PBF | International Rectifier ( Infineon ) | 80 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Download |
IRFB3607PBF | Infineon | Operational Amplifiers - Op Amps Dual Low Power | Download |
IRFB3607PBF | International Rectifier(Infineon) | Drain-source voltage (Vdss): 75V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 4V @ 100uA Drain-source on-resistance: 9mΩ @ 46A, 10V Maximum power dissipation (Ta= 25°C): 140W Type: N-channel N-channel, 75V, 80A, 9mΩ@10V | Download |
IRFB3607PbF | Thinki Semiconductor Co.,Ltd. | ThinkiSemi 85V,92A N-Channel Trench Process Power MOSFETs | Download |
漏源电压(Vdss):75V 连续漏极电流(Id)(25°C 时):80A 栅源极阈值电压:4V @ 100uA 漏源导通电阻:9mΩ @ 46A,10V 最大功率耗散(Ta=25°C):140W 类型:N沟道 N沟道,75V,80A,9mΩ@10V
Parameter Name | Attribute value |
Drain-source voltage (Vdss) | 75V |
Continuous drain current (Id) at 25°C | 80A |
Gate-source threshold voltage | 4V @ 100uA |
Drain-source on-resistance | 9mΩ @ 46A,10V |
Maximum power dissipation (Ta=25°C) | 140W |
type | N channel |