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irfb3607p

Among 4 related components, irfb3607p have related pdf.
Part Number Manufacturer Description Datasheet
IRFB3607PBF International Rectifier ( Infineon ) 80 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Download
IRFB3607PBF Infineon Operational Amplifiers - Op Amps Dual Low Power Download
IRFB3607PBF International Rectifier(Infineon) Drain-source voltage (Vdss): 75V Continuous drain current (Id) (at 25°C): 80A Gate-source threshold voltage: 4V @ 100uA Drain-source on-resistance: 9mΩ @ 46A, 10V Maximum power dissipation (Ta= 25°C): 140W Type: N-channel N-channel, 75V, 80A, 9mΩ@10V Download
IRFB3607PbF Thinki Semiconductor Co.,Ltd. ThinkiSemi 85V,92A N-Channel Trench Process Power MOSFETs Download
irfb3607p parameters:

Description

漏源电压(Vdss):75V 连续漏极电流(Id)(25°C 时):80A 栅源极阈值电压:4V @ 100uA 漏源导通电阻:9mΩ @ 46A,10V 最大功率耗散(Ta=25°C):140W 类型:N沟道 N沟道,75V,80A,9mΩ@10V

Parametric
Parameter NameAttribute value
Drain-source voltage (Vdss)75V
Continuous drain current (Id) at 25°C80A
Gate-source threshold voltage4V @ 100uA
Drain-source on-resistance9mΩ @ 46A,10V
Maximum power dissipation (Ta=25°C)140W
typeN channel

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